購買 TK100E08N1,S1X與BYCHPS
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		| VGS(TH)(最大)@標識: | 4V @ 1mA | 
|---|---|
| Vgs(最大): | ±20V | 
| 技術: | MOSFET (Metal Oxide) | 
| 供應商設備封裝: | TO-220 | 
| 系列: | U-MOSVIII-H | 
| RDS(ON)(最大值)@標識,柵極電壓: | 3.2 mOhm @ 50A, 10V | 
| 功率耗散(最大): | 255W (Tc) | 
| 封装: | Tube | 
| 封裝/箱體: | TO-220-3 | 
| 其他名稱: | TK100E08N1,S1X(S  TK100E08N1S1X  | 
| 工作溫度: | 150°C (TJ) | 
| 安裝類型: | Through Hole | 
| 濕度敏感度(MSL): | 1 (Unlimited) | 
| 製造商標準交貨期: | 12 Weeks | 
| 製造商零件編號: | TK100E08N1,S1X | 
| 輸入電容(Ciss)(Max)@ Vds: | 9000pF @ 40V | 
| 柵極電荷(Qg)(Max)@ Vgs: | 130nC @ 10V | 
| FET型: | N-Channel | 
| FET特點: | - | 
| 展開說明: | N-Channel 80V 100A (Ta) 255W (Tc) Through Hole TO-220 | 
| 驅動電壓(最大Rds開,最小Rds開): | 10V | 
| 漏極至源極電壓(Vdss): | 80V | 
| 描述: | MOSFET N-CH 80V 100A TO220 | 
| 電流 - 25°C連續排水(Id): | 100A (Ta) | 
| Email: | [email protected] |