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SIHU6N65E-GE3
- 型號:
- SIHU6N65E-GE3
- 描述:
- MOSFET N-CH 650V 6A IPAK
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 16407 Pieces
簡單介紹
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產品特性
| VGS（TH）（最大）@標識: | 4V @ 250µA |
|---|---|
| Vgs（最大）: | ±30V |
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | IPAK (TO-251) |
| 系列: | - |
| RDS（ON）（最大值）@標識，柵極電壓: | 600 mOhm @ 3A, 10V |
| 功率耗散（最大）: | 78W (Tc) |
| 封装: | Tube |
| 封裝/箱體: | TO-251-3 Long Leads, IPak, TO-251AB |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Through Hole |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 19 Weeks |
| 製造商零件編號: | SIHU6N65E-GE3 |
| 輸入電容（Ciss）（Max）@ Vds: | 820pF @ 100V |
| 柵極電荷（Qg）（Max）@ Vgs: | 48nC @ 10V |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 650V 7A (Tc) 78W (Tc) Through Hole IPAK (TO-251) |
| 驅動電壓（最大Rds開，最小Rds開）: | 10V |
| 漏極至源極電壓（Vdss）: | 650V |
| 描述: | MOSFET N-CH 650V 6A IPAK |
| 電流 - 25°C連續排水（Id）: | 7A (Tc) |
| Email: | [email protected] |
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