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SCT30N120
- 型號:
- SCT30N120
- 製造商:
- ST
- 描述:
- MOSFET N-CH 1200V 45A HIP247
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 16045 Pieces
簡單介紹
BYCHIPS是 SCT30N120的现货代理商，我們有庫存立即運輸，也可供長時間供應。請寄給我們您的SCT30N120購買計劃通過電子郵件，我們會根據您的計劃給您最優惠的價格。
產品特性
| VGS（TH）（最大）@標識: | 2.6V @ 1mA (Typ) |
|---|---|
| Vgs（最大）: | +25V, -10V |
| 技術: | SiCFET (Silicon Carbide) |
| 供應商設備封裝: | HiP247™ |
| 系列: | - |
| RDS（ON）（最大值）@標識，柵極電壓: | 100 mOhm @ 20A, 20V |
| 功率耗散（最大）: | 270W (Tc) |
| 封装: | Tube |
| 封裝/箱體: | TO-247-3 |
| 其他名稱: | 497-14960 |
| 工作溫度: | -55°C ~ 200°C (TJ) |
| 安裝類型: | Through Hole |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商零件編號: | SCT30N120 |
| 輸入電容（Ciss）（Max）@ Vds: | 1700pF @ 400V |
| 柵極電荷（Qg）（Max）@ Vgs: | 105nC @ 20V |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 1200V (1.2kV) 40A (Tc) 270W (Tc) Through Hole HiP247™ |
| 驅動電壓（最大Rds開，最小Rds開）: | 20V |
| 漏極至源極電壓（Vdss）: | 1200V (1.2kV) |
| 描述: | MOSFET N-CH 1200V 45A HIP247 |
| 電流 - 25°C連續排水（Id）: | 40A (Tc) |
| Email: | [email protected] |
SCT30N120的相似型號
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