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SPD30N03S2L20GBTMA1
- 型號:
- SPD30N03S2L20GBTMA1
- 描述:
- MOSFET N-CH 30V 30A TO252-3
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 15794 Pieces
簡單介紹
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產品特性
| VGS（TH）（最大）@標識: | 2V @ 23µA |
|---|---|
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | PG-TO252-3 |
| 系列: | OptiMOS™ |
| RDS（ON）（最大值）@標識，柵極電壓: | 20 mOhm @ 18A, 10V |
| 功率耗散（最大）: | 60W (Tc) |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| 其他名稱: | SP000443768 SPD30N03S2L-20 G SPD30N03S2L-20 G-ND SPD30N03S2L-20 GTR-ND SPD30N03S2L20G |
| 工作溫度: | -55°C ~ 175°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商零件編號: | SPD30N03S2L20GBTMA1 |
| 輸入電容（Ciss）（Max）@ Vds: | 700pF @ 25V |
| 柵極電荷（Qg）（Max）@ Vgs: | 19nC @ 10V |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 30V 30A (Tc) 60W (Tc) Surface Mount PG-TO252-3 |
| 漏極至源極電壓（Vdss）: | 30V |
| 描述: | MOSFET N-CH 30V 30A TO252-3 |
| 電流 - 25°C連續排水（Id）: | 30A (Tc) |
| Email: | [email protected] |
SPD30N03S2L20GBTMA1的相似型號
| 圖片 | 型號 | 製造商 | 描述 | 查看 |
|---|---|---|---|---|
 |
SPD30N03S2L-07 | Infineon Technologies | MOSFET N-CH 30V 30A DPAK | 在線詢價 |
|
SPD30N03S2L07T | Infineon Technologies | MOSFET N-CH 30V 30A DPAK | 在線詢價 |
|
SPD30N03S2L10T | Infineon Technologies | MOSFET N-CH 30V 30A DPAK | 在線詢價 |
|
SPD30N03S2L07GBTMA1 | Infineon Technologies | MOSFET N-CH 30V 30A TO252-3 | 在線詢價 |
|
SPD30N08S2L-21 | Infineon Technologies | MOSFET N-CH 75V 30A DPAK | 在線詢價 |
|
SPD30N03S2L-20 | Infineon Technologies | MOSFET N-CH 30V 30A DPAK | 在線詢價 |
|
SPD30N03S2L-10 | Infineon Technologies | MOSFET N-CH 30V 30A DPAK | 在線詢價 |
|
SPD30N03S2L10GBTMA1 | Infineon Technologies | MOSFET N-CH 30V 30A TO252-3 | 在線詢價 |
|
SPD30N06S2-15 | Infineon Technologies | MOSFET N-CH 55V 30A DPAK | 在線詢價 |
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