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IRF6602
- 型號:
- IRF6602
- 描述:
- MOSFET N-CH 20V 11A DIRECTFET
- 無鉛狀態/ RoHS狀態:
- 包含鉛/ RoHS不兼容
- 庫存數量:
- 14245 Pieces
- 數據表:
- IRF6602.pdf
簡單介紹
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產品特性
| VGS（TH）（最大）@標識: | 2.3V @ 250µA |
|---|---|
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | DIRECTFET™ MQ |
| 系列: | HEXFET® |
| RDS（ON）（最大值）@標識，柵極電壓: | 13 mOhm @ 11A, 10V |
| 功率耗散（最大）: | 2.3W (Ta), 42W (Tc) |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | DirectFET™ Isometric MQ |
| 其他名稱: | IRF6602TR |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 3 (168 Hours) |
| 製造商零件編號: | IRF6602 |
| 輸入電容（Ciss）（Max）@ Vds: | 1420pF @ 10V |
| 柵極電荷（Qg）（Max）@ Vgs: | 18nC @ 4.5V |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 20V 11A (Ta), 48A (Tc) 2.3W (Ta), 42W (Tc) Surface Mount DIRECTFET™ MQ |
| 漏極至源極電壓（Vdss）: | 20V |
| 描述: | MOSFET N-CH 20V 11A DIRECTFET |
| 電流 - 25°C連續排水（Id）: | 11A (Ta), 48A (Tc) |
| Email: | [email protected] |
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