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FQA8N100C
- 型號:
- FQA8N100C
- 描述:
- MOSFET N-CH 1000V 8A TO-3P
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 16070 Pieces
- 數據表:
- FQA8N100C.pdf
簡單介紹
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產品特性
| VGS（TH）（最大）@標識: | 5V @ 250µA |
|---|---|
| Vgs（最大）: | ±30V |
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | TO-3PN |
| 系列: | QFET® |
| RDS（ON）（最大值）@標識，柵極電壓: | 1.45 Ohm @ 4A, 10V |
| 功率耗散（最大）: | 225W (Tc) |
| 封装: | Tube |
| 封裝/箱體: | TO-3P-3, SC-65-3 |
| 其他名稱: | FQA8N100C-ND FQA8N100CFS |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Through Hole |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 20 Weeks |
| 製造商零件編號: | FQA8N100C |
| 輸入電容（Ciss）（Max）@ Vds: | 3220pF @ 25V |
| 柵極電荷（Qg）（Max）@ Vgs: | 70nC @ 10V |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 1000V (1kV) 8A (Tc) 225W (Tc) Through Hole TO-3PN |
| 驅動電壓（最大Rds開，最小Rds開）: | 10V |
| 漏極至源極電壓（Vdss）: | 1000V (1kV) |
| 描述: | MOSFET N-CH 1000V 8A TO-3P |
| 電流 - 25°C連續排水（Id）: | 8A (Tc) |
| Email: | [email protected] |
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