購買 VN0106N3-G-P003與BYCHPS
購買即有保證
VN0106N3-G-P003
- 型號:
- VN0106N3-G-P003
- 描述:
- MOSFET N-CH 60V 350MA TO92-3
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 17398 Pieces
簡單介紹
BYCHIPS是 VN0106N3-G-P003的现货代理商，我們有庫存立即運輸，也可供長時間供應。請寄給我們您的VN0106N3-G-P003購買計劃通過電子郵件，我們會根據您的計劃給您最優惠的價格。
產品特性
| VGS（TH）（最大）@標識: | 2.4V @ 1mA |
|---|---|
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | TO-92-3 |
| 系列: | - |
| RDS（ON）（最大值）@標識，柵極電壓: | 3 Ohm @ 1A, 10V |
| 功率耗散（最大）: | 1W (Tc) |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Through Hole |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 5 Weeks |
| 製造商零件編號: | VN0106N3-G-P003 |
| 輸入電容（Ciss）（Max）@ Vds: | 65pF @ 25V |
| 柵極電荷（Qg）（Max）@ Vgs: | - |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 60V 350mA (Tj) 1W (Tc) Through Hole TO-92-3 |
| 漏極至源極電壓（Vdss）: | 60V |
| 描述: | MOSFET N-CH 60V 350MA TO92-3 |
| 電流 - 25°C連續排水（Id）: | 350mA (Tj) |
| Email: | [email protected] |
VN0106N3-G-P003的相似型號
最新資訊
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog