購買 TPN2R503NC,L1Q與BYCHPS
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VGS(TH)(最大)@標識: | 2.3V @ 500µA |
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技術: | MOSFET (Metal Oxide) |
供應商設備封裝: | 8-TSON Advance (3.3x3.3) |
系列: | U-MOSVIII |
RDS(ON)(最大值)@標識,柵極電壓: | 2.5 mOhm @ 20A, 10V |
功率耗散(最大): | 700mW (Ta), 35W (Tc) |
封装: | Tape & Reel (TR) |
封裝/箱體: | 8-PowerVDFN |
其他名稱: | TPN2R503NC,L1Q(M TPN2R503NCL1Q TPN2R503NCL1QTR |
工作溫度: | 150°C (TJ) |
安裝類型: | Surface Mount |
濕度敏感度(MSL): | 1 (Unlimited) |
製造商標準交貨期: | 16 Weeks |
製造商零件編號: | TPN2R503NC,L1Q |
輸入電容(Ciss)(Max)@ Vds: | 2230pF @ 15V |
柵極電荷(Qg)(Max)@ Vgs: | 40nC @ 10V |
FET型: | N-Channel |
FET特點: | - |
展開說明: | N-Channel 30V 40A (Ta) 700mW (Ta), 35W (Tc) Surface Mount 8-TSON Advance (3.3x3.3) |
漏極至源極電壓(Vdss): | 30V |
描述: | MOSFET N CH 30V 40A 8TSON-ADV |
電流 - 25°C連續排水(Id): | 40A (Ta) |
Email: | [email protected] |