購買 TPH2R506PL,L1Q與BYCHPS
購買即有保證
| VGS(TH)(最大)@標識: | 2.5V @ 500µA |
|---|---|
| Vgs(最大): | ±20V |
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | 8-SOP Advance (5x5) |
| 系列: | U-MOSIX-H |
| RDS(ON)(最大值)@標識,柵極電壓: | 4.4 mOhm @ 30A, 4.5V |
| 功率耗散(最大): | 134W (Tc) |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | 8-PowerVDFN |
| 其他名稱: | TPH2R506PL,L1Q(M TPH2R506PLL1Q TPH2R506PLL1QTR |
| 工作溫度: | 175°C (TJ) |
| 安裝類型: | Surface Mount |
| 製造商標準交貨期: | 16 Weeks |
| 製造商零件編號: | TPH2R506PL,L1Q |
| 輸入電容(Ciss)(Max)@ Vds: | 5435pF @ 30V |
| 柵極電荷(Qg)(Max)@ Vgs: | 60nC @ 10V |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 60V 100A 134W (Tc) Surface Mount 8-SOP Advance (5x5) |
| 驅動電壓(最大Rds開,最小Rds開): | 4.5V, 10V |
| 漏極至源極電壓(Vdss): | 60V |
| 描述: | X35 PB-F POWER MOSFET TRANSISTOR |
| 電流 - 25°C連續排水(Id): | 100A |
| Email: | [email protected] |