購買 SUP50N03-5M1P-GE3與BYCHPS
購買即有保證
VGS(TH)(最大)@標識: | 2.5V @ 250µA |
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技術: | MOSFET (Metal Oxide) |
供應商設備封裝: | TO-220AB |
系列: | TrenchFET® |
RDS(ON)(最大值)@標識,柵極電壓: | 5.1 mOhm @ 22A, 10V |
功率耗散(最大): | 2.7W (Ta), 59.5W (Tc) |
封装: | Bulk |
封裝/箱體: | TO-220-3 |
其他名稱: | SUP50N03-5M1P-GE3CT SUP50N03-5M1P-GE3CT-ND SUP50N035M1PGE3 |
工作溫度: | -55°C ~ 150°C (TJ) |
安裝類型: | Through Hole |
濕度敏感度(MSL): | 1 (Unlimited) |
製造商零件編號: | SUP50N03-5M1P-GE3 |
輸入電容(Ciss)(Max)@ Vds: | 2780pF @ 15V |
柵極電荷(Qg)(Max)@ Vgs: | 66nC @ 10V |
FET型: | N-Channel |
FET特點: | - |
展開說明: | N-Channel 30V 50A (Tc) 2.7W (Ta), 59.5W (Tc) Through Hole TO-220AB |
漏極至源極電壓(Vdss): | 30V |
描述: | MOSFET N-CH 30V 50A TO-220AB |
電流 - 25°C連續排水(Id): | 50A (Tc) |
Email: | [email protected] |