購買 SIHP12N60E-E3與BYCHPS
購買即有保證
SIHP12N60E-E3
- 型號:
- SIHP12N60E-E3
- 描述:
- MOSFET N-CH 600V 12A TO220AB
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 17037 Pieces
簡單介紹
BYCHIPS是 SIHP12N60E-E3的现货代理商，我們有庫存立即運輸，也可供長時間供應。請寄給我們您的SIHP12N60E-E3購買計劃通過電子郵件，我們會根據您的計劃給您最優惠的價格。
產品特性
| VGS（TH）（最大）@標識: | 4V @ 250µA |
|---|---|
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | TO-220AB |
| 系列: | - |
| RDS（ON）（最大值）@標識，柵極電壓: | 380 mOhm @ 6A, 10V |
| 功率耗散（最大）: | 147W (Tc) |
| 封装: | Bulk |
| 封裝/箱體: | TO-220-3 Full Pack |
| 其他名稱: | SIHP12N60EE3 |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Through Hole |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 19 Weeks |
| 製造商零件編號: | SIHP12N60E-E3 |
| 輸入電容（Ciss）（Max）@ Vds: | 937pF @ 100V |
| 柵極電荷（Qg）（Max）@ Vgs: | 58nC @ 10V |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 600V 12A (Tc) 147W (Tc) Through Hole TO-220AB |
| 漏極至源極電壓（Vdss）: | 600V |
| 描述: | MOSFET N-CH 600V 12A TO220AB |
| 電流 - 25°C連續排水（Id）: | 12A (Tc) |
| Email: | [email protected] |
SIHP12N60E-E3的相似型號
| 圖片 | 型號 | 製造商 | 描述 | 查看 |
|---|---|---|---|---|
 |
SIHP17N60D-E3 | Vishay Siliconix | MOSFET N-CH 600V 17A TO-220AB | 在線詢價 |
|
SIHP12N65E-GE3 | Vishay Siliconix | MOSFET N-CH 650V 12A TO-220AB | 在線詢價 |
|
SIHP15N65E-GE3 | Vishay Siliconix | MOSFET N-CH 650V 15A TO220AB | 在線詢價 |
|
SIHP12N50C-E3 | Vishay Siliconix | MOSFET N-CH 500V 12A TO-220AB | 在線詢價 |
|
SIHP16N50C-E3 | Vishay Siliconix | MOSFET N-CH 500V 16A TO-220AB | 在線詢價 |
|
SIHP12N60E-GE3 | Vishay Siliconix | MOSFET N-CH 600V 12A TO220AB | 在線詢價 |
|
SIHP18N50C-E3 | Vishay Siliconix | MOSFET N-CH 500V 18A TO220 | 在線詢價 |
|
SIHP14N50D-GE3 | Vishay Siliconix | MOSFET N-CH 500V 14A TO-200AB | 在線詢價 |
|
SIHP12N50E-GE3 | Vishay Siliconix | MOSFET N-CH 500V 10.5A TO-220AB | 在線詢價 |
|
SIHP15N60E-GE3 | Vishay Siliconix | MOSFET N-CH 600V 15A TO220AB | 在線詢價 |
|
SIHP15N50E-GE3 | Vishay Siliconix | MOSFET N-CH 500V 14.5A TO-220AB | 在線詢價 |
|
SIHP14N50D-E3 | Vishay Siliconix | MOSFET N-CH 500V 14A TO-200AB | 在線詢價 |
最新資訊
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers