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SI8425DB-T1-E1
- 型號:
- SI8425DB-T1-E1
- 描述:
- MOSFET P-CH 20V MICROFOOT
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 18601 Pieces
簡單介紹
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產品特性
| VGS（TH）（最大）@標識: | 900mV @ 250µA |
|---|---|
| Vgs（最大）: | ±10V |
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | 4-WLCSP (1.6x1.6) |
| 系列: | TrenchFET® |
| RDS（ON）（最大值）@標識，柵極電壓: | 23 mOhm @ 2A, 4.5V |
| 功率耗散（最大）: | 1.1W (Ta), 2.7W (Tc) |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | 4-UFBGA, WLCSP |
| 其他名稱: | SI8425DB-T1-E1TR |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 24 Weeks |
| 製造商零件編號: | SI8425DB-T1-E1 |
| 輸入電容（Ciss）（Max）@ Vds: | 2800pF @ 10V |
| 柵極電荷（Qg）（Max）@ Vgs: | 110nC @ 10V |
| FET型: | P-Channel |
| FET特點: | - |
| 展開說明: | P-Channel 20V 1.1W (Ta), 2.7W (Tc) Surface Mount 4-WLCSP (1.6x1.6) |
| 驅動電壓（最大Rds開，最小Rds開）: | 1.8V, 4.5V |
| 漏極至源極電壓（Vdss）: | 20V |
| 描述: | MOSFET P-CH 20V MICROFOOT |
| 電流 - 25°C連續排水（Id）: | - |
| Email: | [email protected] |
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