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SI8406DB-T2-E1
- 型號:
- SI8406DB-T2-E1
- 描述:
- MOSFET N-CH 20V 16A MICROFOOT
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 12229 Pieces
簡單介紹
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產品特性
| VGS（TH）（最大）@標識: | 850mV @ 250µA |
|---|---|
| Vgs（最大）: | ±8V |
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | 6-Micro Foot™ |
| 系列: | TrenchFET® |
| RDS（ON）（最大值）@標識，柵極電壓: | 33 mOhm @ 1A, 4.5V |
| 功率耗散（最大）: | 2.77W (Ta), 13W (Tc) |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | 6-UFBGA |
| 其他名稱: | SI8406DB-T2-E1TR SI8406DBT2E1 |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 24 Weeks |
| 製造商零件編號: | SI8406DB-T2-E1 |
| 輸入電容（Ciss）（Max）@ Vds: | 830pF @ 10V |
| 柵極電荷（Qg）（Max）@ Vgs: | 20nC @ 8V |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 20V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ |
| 驅動電壓（最大Rds開，最小Rds開）: | 1.8V, 4.5V |
| 漏極至源極電壓（Vdss）: | 20V |
| 描述: | MOSFET N-CH 20V 16A MICROFOOT |
| 電流 - 25°C連續排水（Id）: | 16A (Tc) |
| Email: | [email protected] |
SI8406DB-T2-E1的相似型號
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|---|---|---|---|---|
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FDV302P_NB8V001 | Fairchild/ON Semiconductor | MOSFET P-CH 25V 120MA SOT-23 | 在線詢價 |
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AON7405 | Alpha & Omega Semiconductor Inc. | MOSFET P-CH 30V 25A 8DFN | 在線詢價 |
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STW11NK90Z | STMicroelectronics | MOSFET N-CH 900V 9.2A TO-247 | 在線詢價 |
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IXTQ48N20T | IXYS | MOSFET N-CH 200V 48A TO-3P | 在線詢價 |
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