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SI5980DU-T1-GE3
- 型號:
- SI5980DU-T1-GE3
- 描述:
- MOSFET 2N-CH 100V 2.5A CHIPFET
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 16059 Pieces
簡單介紹
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產品特性
| VGS（TH）（最大）@標識: | 4V @ 250µA |
|---|---|
| 供應商設備封裝: | PowerPAK® ChipFet Dual |
| 系列: | TrenchFET® |
| RDS（ON）（最大值）@標識，柵極電壓: | 567 mOhm @ 400mA, 10V |
| 功率 - 最大: | 7.8W |
| 封装: | Original-Reel® |
| 封裝/箱體: | PowerPAK® ChipFET™ Dual |
| 其他名稱: | SI5980DU-T1-GE3DKR |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商零件編號: | SI5980DU-T1-GE3 |
| 輸入電容（Ciss）（Max）@ Vds: | 78pF @ 50V |
| 柵極電荷（Qg）（Max）@ Vgs: | 3.3nC @ 10V |
| FET型: | 2 N-Channel (Dual) |
| FET特點: | Standard |
| 展開說明: | Mosfet Array 2 N-Channel (Dual) 100V 2.5A 7.8W Surface Mount PowerPAK® ChipFet Dual |
| 漏極至源極電壓（Vdss）: | 100V |
| 描述: | MOSFET 2N-CH 100V 2.5A CHIPFET |
| 電流 - 25°C連續排水（Id）: | 2.5A |
| Email: | [email protected] |
SI5980DU-T1-GE3的相似型號
| 圖片 | 型號 | 製造商 | 描述 | 查看 |
|---|---|---|---|---|
 |
FMM75-01F | IXYS | MOSFET 2N-CH 100V 75A I4-PAC-5 | 在線詢價 |
 |
MP6M11TCR | Rohm Semiconductor | MOSFET N/P-CH 30V 3.5A MPT6 | 在線詢價 |
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EPC2103ENGRT | EPC | TRANS GAN SYM HALF BRDG 80V | 在線詢價 |
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DMS3017SSD-13 | Diodes Incorporated | MOSFET 2N-CH 30V 8A/6A 8SO | 在線詢價 |
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VT6M1T2CR | Rohm Semiconductor | MOSFET N/P-CH 20V 0.1A VMT6 | 在線詢價 |
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SI4830ADY-T1-E3 | Vishay Siliconix | MOSFET 2N-CH 30V 5.7A 8-SOIC | 在線詢價 |
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SI1024X-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 20V 0.485A SC89-6 | 在線詢價 |
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NTMFD4C88NT1G | ON Semiconductor | MOSFET 2N-CH 30V 8DFN | 在線詢價 |
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AOD607_001 | Alpha & Omega Semiconductor Inc. | MOSFET N/P-CH 30V TO252-4 | 在線詢價 |
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UPA2672T1R-E2-AX | Renesas Electronics America | MOSFET 2P-CH 12V 4A 6HUSON | 在線詢價 |
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