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VT6M1T2CR
- 型號:
- VT6M1T2CR
- 描述:
- MOSFET N/P-CH 20V 0.1A VMT6
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 12829 Pieces
- 數據表:
- VT6M1T2CR.pdf
簡單介紹
BYCHIPS是 VT6M1T2CR的现货代理商，我們有庫存立即運輸，也可供長時間供應。請寄給我們您的VT6M1T2CR購買計劃通過電子郵件，我們會根據您的計劃給您最優惠的價格。
產品特性
| VGS（TH）（最大）@標識: | 1V @ 100µA |
|---|---|
| 供應商設備封裝: | VMT6 |
| 系列: | - |
| RDS（ON）（最大值）@標識，柵極電壓: | 3.5 Ohm @ 100mA, 4.5V |
| 功率 - 最大: | 120mW |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | 6-SMD, Flat Leads |
| 其他名稱: | VT6M1T2CRTR |
| 工作溫度: | 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 17 Weeks |
| 製造商零件編號: | VT6M1T2CR |
| 輸入電容（Ciss）（Max）@ Vds: | 7.1pF @ 10V |
| 柵極電荷（Qg）（Max）@ Vgs: | - |
| FET型: | N and P-Channel |
| FET特點: | Logic Level Gate, 1.2V Drive |
| 展開說明: | Mosfet Array N and P-Channel 20V 100mA 120mW Surface Mount VMT6 |
| 漏極至源極電壓（Vdss）: | 20V |
| 描述: | MOSFET N/P-CH 20V 0.1A VMT6 |
| 電流 - 25°C連續排水（Id）: | 100mA |
| Email: | [email protected] |
VT6M1T2CR的相似型號
| 圖片 | 型號 | 製造商 | 描述 | 查看 |
|---|---|---|---|---|
 |
SI4562DY-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V 8-SOIC | 在線詢價 |
 |
DMC3400SDW-13 | Diodes Incorporated | MOSFET N/P-CH 30V SOT363 | 在線詢價 |
 |
AO4818B | Alpha & Omega Semiconductor Inc. | MOSFET 2N-CH 30V 8A 8-SOIC | 在線詢價 |
|
SI4936BDY-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 30V 6.9A 8-SOIC | 在線詢價 |
 |
NTMFD4C88NT1G | ON Semiconductor | MOSFET 2N-CH 30V 8DFN | 在線詢價 |
 |
STS9D8NH3LL | STMicroelectronics | MOSFET 2N-CH 30V 8A/9A 8SOIC | 在線詢價 |
 |
TT8J1TR | Rohm Semiconductor | MOSFET 2P-CH 12V 2.5A TSST8 | 在線詢價 |
 |
DMC4029SK4-13 | Diodes Incorporated | MOSFET N/P-CH 40V 8.3A TO252 | 在線詢價 |
 |
APTC60DSKM70T1G | Microsemi Corporation | MOSFET 2N-CH 600V 39A SP1 | 在線詢價 |
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