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RQJ0303PGDQA#H6
- 型號:
- RQJ0303PGDQA#H6
- 描述:
- MOSFET P-CH 30V 3.3A 3MPAK
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 13746 Pieces
簡單介紹
BYCHIPS是 RQJ0303PGDQA#H6的现货代理商，我們有庫存立即運輸，也可供長時間供應。請寄給我們您的RQJ0303PGDQA#H6購買計劃通過電子郵件，我們會根據您的計劃給您最優惠的價格。
產品特性
| VGS（TH）（最大）@標識: | - |
|---|---|
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | 3-MPAK |
| 系列: | - |
| RDS（ON）（最大值）@標識，柵極電壓: | 68 mOhm @ 1.6A, 10V |
| 功率耗散（最大）: | 800mW (Ta) |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | TO-236-3, SC-59, SOT-23-3 |
| 工作溫度: | 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 16 Weeks |
| 製造商零件編號: | RQJ0303PGDQA#H6 |
| 輸入電容（Ciss）（Max）@ Vds: | 625pF @ 10V |
| 柵極電荷（Qg）（Max）@ Vgs: | 12nC @ 10V |
| FET型: | P-Channel |
| FET特點: | - |
| 展開說明: | P-Channel 30V 3.3A (Ta) 800mW (Ta) Surface Mount 3-MPAK |
| 漏極至源極電壓（Vdss）: | 30V |
| 描述: | MOSFET P-CH 30V 3.3A 3MPAK |
| 電流 - 25°C連續排水（Id）: | 3.3A (Ta) |
| Email: | [email protected] |
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