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PMGD290XN,115
- 型號:
- PMGD290XN,115
- 製造商:
- Nexperia
- 描述:
- MOSFET 2N-CH 20V 0.86A 6TSSOP
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 16717 Pieces
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產品特性
| VGS（TH）（最大）@標識: | 1.5V @ 250µA |
|---|---|
| 供應商設備封裝: | 6-TSSOP |
| 系列: | TrenchMOS™ |
| RDS（ON）（最大值）@標識，柵極電壓: | 350 mOhm @ 200mA, 4.5V |
| 功率 - 最大: | 410mW |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | 6-TSSOP, SC-88, SOT-363 |
| 其他名稱: | 1727-3126-2 568-2366-2 568-2366-2-ND 934057731115 PMGD290XN T/R PMGD290XN115 |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商零件編號: | PMGD290XN,115 |
| 輸入電容（Ciss）（Max）@ Vds: | 34pF @ 20V |
| 柵極電荷（Qg）（Max）@ Vgs: | 0.72nC @ 4.5V |
| FET型: | 2 N-Channel (Dual) |
| FET特點: | Logic Level Gate |
| 展開說明: | Mosfet Array 2 N-Channel (Dual) 20V 860mA 410mW Surface Mount 6-TSSOP |
| 漏極至源極電壓（Vdss）: | 20V |
| 描述: | MOSFET 2N-CH 20V 0.86A 6TSSOP |
| 電流 - 25°C連續排水（Id）: | 860mA |
| Email: | [email protected] |
PMGD290XN,115的相似型號
| 圖片 | 型號 | 製造商 | 描述 | 查看 |
|---|---|---|---|---|
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PMGD280UN,115 | Nexperia USA Inc. | MOSFET 2N-CH 20V 0.87A 6TSSOP | 在線詢價 |
|
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IXTL2X200N085T | IXYS | MOSFET 2N-CH 85V 112A I5-PAK | 在線詢價 |
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UT6MA3TCR | Rohm Semiconductor | 20V NCH+PCH MIDDLE POWER MOSFET | 在線詢價 |
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IRF5852TR | Infineon Technologies | MOSFET 2N-CH 20V 2.7A 6-TSOP | 在線詢價 |
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