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IXTU01N100D
- 型號:
- IXTU01N100D
- 製造商:
- IXYS Corporation
- 描述:
- MOSFET N-CH 1000V 0.1A TO-251
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 14130 Pieces
- 數據表:
- IXTU01N100D.pdf
簡單介紹
BYCHIPS是 IXTU01N100D的现货代理商，我們有庫存立即運輸，也可供長時間供應。請寄給我們您的IXTU01N100D購買計劃通過電子郵件，我們會根據您的計劃給您最優惠的價格。
產品特性
| VGS（TH）（最大）@標識: | 5V @ 25µA |
|---|---|
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | TO-251 |
| 系列: | - |
| RDS（ON）（最大值）@標識，柵極電壓: | 80 Ohm @ 50mA, 0V |
| 功率耗散（最大）: | 1.1W (Ta), 25W (Tc) |
| 封装: | Tube |
| 封裝/箱體: | TO-251-3 Short Leads, IPak, TO-251AA |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Through Hole |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 10 Weeks |
| 製造商零件編號: | IXTU01N100D |
| 輸入電容（Ciss）（Max）@ Vds: | 120pF @ 25V |
| 柵極電荷（Qg）（Max）@ Vgs: | - |
| FET型: | N-Channel |
| FET特點: | Depletion Mode |
| 展開說明: | N-Channel 1000V (1kV) 100mA (Tc) 1.1W (Ta), 25W (Tc) Through Hole TO-251 |
| 漏極至源極電壓（Vdss）: | 1000V (1kV) |
| 描述: | MOSFET N-CH 1000V 0.1A TO-251 |
| 電流 - 25°C連續排水（Id）: | 100mA (Tc) |
| Email: | [email protected] |
IXTU01N100D的相似型號
| 圖片 | 型號 | 製造商 | 描述 | 查看 |
|---|---|---|---|---|
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|
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