購買 IRF6794MTR1PBF與BYCHPS
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VGS(TH)(最大)@標識: | 2.35V @ 100µA |
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技術: | MOSFET (Metal Oxide) |
供應商設備封裝: | DIRECTFET™ MX |
系列: | HEXFET® |
RDS(ON)(最大值)@標識,柵極電壓: | 1.7 mOhm @ 32A, 10V |
功率耗散(最大): | 2.8W (Ta), 100W (Tc) |
封装: | Cut Tape (CT) |
封裝/箱體: | DirectFET™ Isometric MX |
其他名稱: | IRF6794MTR1PBFCT |
工作溫度: | -40°C ~ 150°C (TJ) |
安裝類型: | Surface Mount |
濕度敏感度(MSL): | 3 (168 Hours) |
製造商零件編號: | IRF6794MTR1PBF |
輸入電容(Ciss)(Max)@ Vds: | 4420pF @ 13V |
柵極電荷(Qg)(Max)@ Vgs: | 47nC @ 4.5V |
FET型: | N-Channel |
FET特點: | Schottky Diode (Body) |
展開說明: | N-Channel 25V 32A (Ta), 200A (Tc) 2.8W (Ta), 100W (Tc) Surface Mount DIRECTFET™ MX |
漏極至源極電壓(Vdss): | 25V |
描述: | MOSFET N-CH 25V 32A DIRECTFET-MX |
電流 - 25°C連續排水(Id): | 32A (Ta), 200A (Tc) |
Email: | [email protected] |