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IPD60R1K0CEATMA1
- 型號:
- IPD60R1K0CEATMA1
- 描述:
- MOSFET N-CH 600V TO-252-3
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 14841 Pieces
簡單介紹
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產品特性
| VGS（TH）（最大）@標識: | 3.5V @ 130µA |
|---|---|
| Vgs（最大）: | ±20V |
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | TO-252-3 |
| 系列: | CoolMOS™ CE |
| RDS（ON）（最大值）@標識，柵極電壓: | 1 Ohm @ 1.5A, 10V |
| 功率耗散（最大）: | 37W (Tc) |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| 其他名稱: | IPD60R1K0CEATMA1TR SP001276032 |
| 工作溫度: | -40°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 3 (168 Hours) |
| 製造商零件編號: | IPD60R1K0CEATMA1 |
| 輸入電容（Ciss）（Max）@ Vds: | 280pF @ 100V |
| 柵極電荷（Qg）（Max）@ Vgs: | 13nC @ 10V |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 600V 4.3A (Tc) 37W (Tc) Surface Mount TO-252-3 |
| 驅動電壓（最大Rds開，最小Rds開）: | 10V |
| 漏極至源極電壓（Vdss）: | 600V |
| 描述: | MOSFET N-CH 600V TO-252-3 |
| 電流 - 25°C連續排水（Id）: | 4.3A (Tc) |
| Email: | [email protected] |
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