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IPB26CNE8N G
- 型號:
- IPB26CNE8N G
- 描述:
- MOSFET N-CH 85V 35A TO263-3
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 19509 Pieces
- 數據表:
- IPB26CNE8N G.pdf
簡單介紹
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產品特性
| VGS（TH）（最大）@標識: | 4V @ 39µA |
|---|---|
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | PG-TO-263 |
| 系列: | OptiMOS™ |
| RDS（ON）（最大值）@標識，柵極電壓: | 26 mOhm @ 35A, 10V |
| 功率耗散（最大）: | 71W (Tc) |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| 其他名稱: | SP000292948 |
| 工作溫度: | -55°C ~ 175°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商零件編號: | IPB26CNE8N G |
| 輸入電容（Ciss）（Max）@ Vds: | 2070pF @ 40V |
| 柵極電荷（Qg）（Max）@ Vgs: | 31nC @ 10V |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 85V 35A (Tc) 71W (Tc) Surface Mount PG-TO-263 |
| 漏極至源極電壓（Vdss）: | 85V |
| 描述: | MOSFET N-CH 85V 35A TO263-3 |
| 電流 - 25°C連續排水（Id）: | 35A (Tc) |
| Email: | [email protected] |
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