購買 GA10JT12-263與BYCHPS
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GA10JT12-263
- 型號:
- GA10JT12-263
- 描述:
- TRANS SJT 1200V 25A
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 17183 Pieces
- 數據表:
- GA10JT12-263.pdf
簡單介紹
BYCHIPS是 GA10JT12-263的现货代理商，我們有庫存立即運輸，也可供長時間供應。請寄給我們您的GA10JT12-263購買計劃通過電子郵件，我們會根據您的計劃給您最優惠的價格。
產品特性
| VGS（TH）（最大）@標識: | - |
|---|---|
| Vgs（最大）: | 3.5V |
| 技術: | SiC (Silicon Carbide Junction Transistor) |
| 供應商設備封裝: | - |
| 系列: | - |
| RDS（ON）（最大值）@標識，柵極電壓: | 120 mOhm @ 10A |
| 功率耗散（最大）: | 170W (Tc) |
| 封装: | Tube |
| 封裝/箱體: | - |
| 其他名稱: | 1242-1186 GA10JT12-220ISO GA10JT12220ISO |
| 工作溫度: | 175°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 18 Weeks |
| 製造商零件編號: | GA10JT12-263 |
| 輸入電容（Ciss）（Max）@ Vds: | 1403pF @ 800V |
| 柵極電荷（Qg）（Max）@ Vgs: | - |
| FET型: | - |
| FET特點: | - |
| 展開說明: | 1200V (1.2kV) 25A (Tc) 170W (Tc) Surface Mount |
| 驅動電壓（最大Rds開，最小Rds開）: | - |
| 漏極至源極電壓（Vdss）: | 1200V (1.2kV) |
| 描述: | TRANS SJT 1200V 25A |
| 電流 - 25°C連續排水（Id）: | 25A (Tc) |
| Email: | [email protected] |
GA10JT12-263的相似型號
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