購買 FQI9N08LTU與BYCHPS
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VGS(TH)(最大)@標識: | 2V @ 250µA |
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技術: | MOSFET (Metal Oxide) |
供應商設備封裝: | I2PAK (TO-262) |
系列: | QFET® |
RDS(ON)(最大值)@標識,柵極電壓: | 210 mOhm @ 4.65A, 10V |
功率耗散(最大): | 3.75W (Ta), 40W (Tc) |
封装: | Tube |
封裝/箱體: | TO-262-3 Long Leads, I²Pak, TO-262AA |
工作溫度: | -55°C ~ 175°C (TJ) |
安裝類型: | Through Hole |
濕度敏感度(MSL): | 1 (Unlimited) |
製造商零件編號: | FQI9N08LTU |
輸入電容(Ciss)(Max)@ Vds: | 280pF @ 25V |
柵極電荷(Qg)(Max)@ Vgs: | 6.1nC @ 5V |
FET型: | N-Channel |
FET特點: | - |
展開說明: | N-Channel 80V 9.3A (Tc) 3.75W (Ta), 40W (Tc) Through Hole I2PAK (TO-262) |
漏極至源極電壓(Vdss): | 80V |
描述: | MOSFET N-CH 80V 9.3A I2PAK |
電流 - 25°C連續排水(Id): | 9.3A (Tc) |
Email: | [email protected] |