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BSZ123N08NS3 G
- 型號:
- BSZ123N08NS3 G
- 描述:
- MOSFET N-CH 80V 40A TSDSON-8
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 19693 Pieces
簡單介紹
BYCHIPS是 BSZ123N08NS3 G的现货代理商，我們有庫存立即運輸，也可供長時間供應。請寄給我們您的BSZ123N08NS3 G購買計劃通過電子郵件，我們會根據您的計劃給您最優惠的價格。
產品特性
| VGS（TH）（最大）@標識: | 3.5V @ 33µA |
|---|---|
| Vgs（最大）: | ±20V |
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | PG-TSDSON-8 |
| 系列: | OptiMOS™ |
| RDS（ON）（最大值）@標識，柵極電壓: | 12.3 mOhm @ 20A, 10V |
| 功率耗散（最大）: | 2.1W (Ta), 66W (Tc) |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | 8-PowerVDFN |
| 其他名稱: | BSZ123N08NS3G BSZ123N08NS3GATMA1 BSZ123N08NS3GINTR BSZ123N08NS3GXT SP000443632 |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 10 Weeks |
| 製造商零件編號: | BSZ123N08NS3 G |
| 輸入電容（Ciss）（Max）@ Vds: | 1700pF @ 40V |
| 柵極電荷（Qg）（Max）@ Vgs: | 25nC @ 10V |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 80V 10A (Ta), 40A (Tc) 2.1W (Ta), 66W (Tc) Surface Mount PG-TSDSON-8 |
| 驅動電壓（最大Rds開，最小Rds開）: | 6V, 10V |
| 漏極至源極電壓（Vdss）: | 80V |
| 描述: | MOSFET N-CH 80V 40A TSDSON-8 |
| 電流 - 25°C連續排水（Id）: | 10A (Ta), 40A (Tc) |
| Email: | [email protected] |
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