購買 STW20NM65N與BYCHPS
購買即有保證
| VGS(TH)(最大)@標識: | 4V @ 250µA |
|---|---|
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | TO-247-3 |
| 系列: | MDmesh™ II |
| RDS(ON)(最大值)@標識,柵極電壓: | 190 mOhm @ 9.5A, 10V |
| 功率耗散(最大): | 160W (Tc) |
| 封装: | Tube |
| 封裝/箱體: | TO-247-3 |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Through Hole |
| 濕度敏感度(MSL): | 1 (Unlimited) |
| 製造商零件編號: | STW20NM65N |
| 輸入電容(Ciss)(Max)@ Vds: | 2500pF @ 50V |
| 柵極電荷(Qg)(Max)@ Vgs: | 70nC @ 10V |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 650V 19A (Tc) 160W (Tc) Through Hole TO-247-3 |
| 漏極至源極電壓(Vdss): | 650V |
| 描述: | MOSFET N-CH 650V 19A TO-247 |
| 電流 - 25°C連續排水(Id): | 19A (Tc) |
| Email: | [email protected] |