購買 SQJ469EP-T1_GE3與BYCHPS
購買即有保證
| VGS(TH)(最大)@標識: | 2.5V @ 250µA |
|---|---|
| Vgs(最大): | ±20V |
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | PowerPAK® SO-8 |
| 系列: | Automotive, AEC-Q101, TrenchFET® |
| RDS(ON)(最大值)@標識,柵極電壓: | 25 mOhm @ 10.2A, 10V |
| 功率耗散(最大): | 100W (Tc) |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | PowerPAK® SO-8 |
| 其他名稱: | SQJ469EP-T1-GE3 SQJ469EP-T1-GE3-ND SQJ469EP-T1-GE3TR SQJ469EP-T1-GE3TR-ND SQJ469EP-T1_GE3TR |
| 工作溫度: | -55°C ~ 175°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度(MSL): | 1 (Unlimited) |
| 製造商標準交貨期: | 18 Weeks |
| 製造商零件編號: | SQJ469EP-T1_GE3 |
| 輸入電容(Ciss)(Max)@ Vds: | 5100pF @ 40V |
| 柵極電荷(Qg)(Max)@ Vgs: | 155nC @ 10V |
| FET型: | P-Channel |
| FET特點: | - |
| 展開說明: | P-Channel 80V 32A (Tc) 100W (Tc) Surface Mount PowerPAK® SO-8 |
| 驅動電壓(最大Rds開,最小Rds開): | 6V, 10V |
| 漏極至源極電壓(Vdss): | 80V |
| 描述: | MOSFET P-CH 80V 32A PPAK SO-8 |
| 電流 - 25°C連續排水(Id): | 32A (Tc) |
| Email: | [email protected] |