購買 SPP18P06PHKSA1與BYCHPS
購買即有保證
VGS(TH)(最大)@標識: | 4V @ 1mA |
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技術: | MOSFET (Metal Oxide) |
供應商設備封裝: | PG-TO-220-3 |
系列: | SIPMOS® |
RDS(ON)(最大值)@標識,柵極電壓: | 130 mOhm @ 13.2A, 10V |
功率耗散(最大): | 81.1W (Ta) |
封装: | Tube |
封裝/箱體: | TO-220-3 |
其他名稱: | SP000012300 SPP18P06P SPP18P06PIN SPP18P06PIN-ND SPP18P06PX SPP18P06PXK SPP18P06PXTIN SPP18P06PXTIN-ND |
工作溫度: | -55°C ~ 175°C (TJ) |
安裝類型: | Through Hole |
濕度敏感度(MSL): | 1 (Unlimited) |
製造商零件編號: | SPP18P06PHKSA1 |
輸入電容(Ciss)(Max)@ Vds: | 860pF @ 25V |
柵極電荷(Qg)(Max)@ Vgs: | 28nC @ 10V |
FET型: | P-Channel |
FET特點: | - |
展開說明: | P-Channel 60V 18.7A (Ta) 81.1W (Ta) Through Hole PG-TO-220-3 |
漏極至源極電壓(Vdss): | 60V |
描述: | MOSFET P-CH 60V 18.7A TO-220AB |
電流 - 25°C連續排水(Id): | 18.7A (Ta) |
Email: | [email protected] |