購買 SPB02N60C3ATMA1與BYCHPS
購買即有保證
VGS(TH)(最大)@標識: | 3.9V @ 80µA |
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技術: | MOSFET (Metal Oxide) |
供應商設備封裝: | PG-TO263-3-2 |
系列: | CoolMOS™ |
RDS(ON)(最大值)@標識,柵極電壓: | 3 Ohm @ 1.1A, 10V |
功率耗散(最大): | 25W (Tc) |
封装: | Tape & Reel (TR) |
封裝/箱體: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
其他名稱: | SP000013516 SPB02N60C3 SPB02N60C3INTR SPB02N60C3INTR-ND SPB02N60C3XT SPB02N60C3XT-ND |
工作溫度: | -55°C ~ 150°C (TJ) |
安裝類型: | Surface Mount |
濕度敏感度(MSL): | 1 (Unlimited) |
製造商零件編號: | SPB02N60C3ATMA1 |
輸入電容(Ciss)(Max)@ Vds: | 200pF @ 25V |
柵極電荷(Qg)(Max)@ Vgs: | 12.5nC @ 10V |
FET型: | N-Channel |
FET特點: | - |
展開說明: | N-Channel 650V 1.8A (Tc) 25W (Tc) Surface Mount PG-TO263-3-2 |
漏極至源極電壓(Vdss): | 650V |
描述: | MOSFET N-CH 650V 1.8A D2PAK |
電流 - 25°C連續排水(Id): | 1.8A (Tc) |
Email: | [email protected] |