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SISS27DN-T1-GE3
- 型號:
- SISS27DN-T1-GE3
- 描述:
- MOSFET P-CH 30V 50A PPAK 1212-8S
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 17809 Pieces
簡單介紹
BYCHIPS是 SISS27DN-T1-GE3的现货代理商，我們有庫存立即運輸，也可供長時間供應。請寄給我們您的SISS27DN-T1-GE3購買計劃通過電子郵件，我們會根據您的計劃給您最優惠的價格。
產品特性
| VGS（TH）（最大）@標識: | 2.2V @ 250µA |
|---|---|
| Vgs（最大）: | ±20V |
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | PowerPAK® 1212-8S (3.3x3.3) |
| 系列: | TrenchFET® |
| RDS（ON）（最大值）@標識，柵極電壓: | 5.6 mOhm @ 15A, 10V |
| 功率耗散（最大）: | 4.8W (Ta), 57W (Tc) |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | 8-PowerVDFN |
| 其他名稱: | SISS27DN-T1-GE3TR |
| 工作溫度: | -50°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 24 Weeks |
| 製造商零件編號: | SISS27DN-T1-GE3 |
| 輸入電容（Ciss）（Max）@ Vds: | 5250pF @ 15V |
| 柵極電荷（Qg）（Max）@ Vgs: | 140nC @ 10V |
| FET型: | P-Channel |
| FET特點: | - |
| 展開說明: | P-Channel 30V 50A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3) |
| 驅動電壓（最大Rds開，最小Rds開）: | 4.5V, 10V |
| 漏極至源極電壓（Vdss）: | 30V |
| 描述: | MOSFET P-CH 30V 50A PPAK 1212-8S |
| 電流 - 25°C連續排水（Id）: | 50A (Tc) |
| Email: | [email protected] |
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