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SIHD12N50E-GE3
- 型號:
- SIHD12N50E-GE3
- 描述:
- MOSFET N-CHAN 500V DPAK
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 12460 Pieces
簡單介紹
BYCHIPS是 SIHD12N50E-GE3的现货代理商，我們有庫存立即運輸，也可供長時間供應。請寄給我們您的SIHD12N50E-GE3購買計劃通過電子郵件，我們會根據您的計劃給您最優惠的價格。
產品特性
| VGS（TH）（最大）@標識: | 4V @ 250µA |
|---|---|
| Vgs（最大）: | ±30V |
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | D-PAK (TO-252AA) |
| 系列: | E |
| RDS（ON）（最大值）@標識，柵極電壓: | 380 mOhm @ 6A, 10V |
| 功率耗散（最大）: | 114W (Tc) |
| 封装: | Cut Tape (CT) |
| 封裝/箱體: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| 其他名稱: | SIHD12N50E-GE3CT SIHD12N50E-GE3CT-ND |
| 工作溫度: | -55°C ~ 150°C (TA) |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 19 Weeks |
| 製造商零件編號: | SIHD12N50E-GE3 |
| 輸入電容（Ciss）（Max）@ Vds: | 886pF @ 100V |
| 柵極電荷（Qg）（Max）@ Vgs: | 50nC @ 10V |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 550V 10.5A (Tc) 114W (Tc) Surface Mount D-PAK (TO-252AA) |
| 驅動電壓（最大Rds開，最小Rds開）: | 10V |
| 漏極至源極電壓（Vdss）: | 550V |
| 描述: | MOSFET N-CHAN 500V DPAK |
| 電流 - 25°C連續排水（Id）: | 10.5A (Tc) |
| Email: | [email protected] |
SIHD12N50E-GE3的相似型號
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