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SIHB8N50D-GE3
- 型號:
- SIHB8N50D-GE3
- 描述:
- MOSFET N-CH 500V 8.7A D2PAK
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 14821 Pieces
簡單介紹
BYCHIPS是 SIHB8N50D-GE3的现货代理商，我們有庫存立即運輸，也可供長時間供應。請寄給我們您的SIHB8N50D-GE3購買計劃通過電子郵件，我們會根據您的計劃給您最優惠的價格。
產品特性
| VGS（TH）（最大）@標識: | 5V @ 250µA |
|---|---|
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | TO-263 (D²Pak) |
| 系列: | - |
| RDS（ON）（最大值）@標識，柵極電壓: | 850 mOhm @ 4A, 10V |
| 功率耗散（最大）: | 156W (Tc) |
| 封装: | Tube |
| 封裝/箱體: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 14 Weeks |
| 製造商零件編號: | SIHB8N50D-GE3 |
| 輸入電容（Ciss）（Max）@ Vds: | 527pF @ 100V |
| 柵極電荷（Qg）（Max）@ Vgs: | 30nC @ 10V |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 500V 8.7A (Tc) 156W (Tc) Surface Mount TO-263 (D²Pak) |
| 漏極至源極電壓（Vdss）: | 500V |
| 描述: | MOSFET N-CH 500V 8.7A D2PAK |
| 電流 - 25°C連續排水（Id）: | 8.7A (Tc) |
| Email: | [email protected] |
SIHB8N50D-GE3的相似型號
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