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SIA778DJ-T1-GE3
- 型號:
- SIA778DJ-T1-GE3
- 描述:
- MOSFET 2N-CH 12V/20V SC70-6
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 19663 Pieces
簡單介紹
BYCHIPS是 SIA778DJ-T1-GE3的现货代理商，我們有庫存立即運輸，也可供長時間供應。請寄給我們您的SIA778DJ-T1-GE3購買計劃通過電子郵件，我們會根據您的計劃給您最優惠的價格。
產品特性
| VGS（TH）（最大）@標識: | 1V @ 250µA |
|---|---|
| 供應商設備封裝: | PowerPAK® SC-70-6 Dual |
| 系列: | TrenchFET® |
| RDS（ON）（最大值）@標識，柵極電壓: | 29 mOhm @ 5A, 4.5V |
| 功率 - 最大: | 6.5W, 5W |
| 封装: | Original-Reel® |
| 封裝/箱體: | PowerPAK® SC-70-6 Dual |
| 其他名稱: | SIA778DJ-T1-GE3DKR |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 18 Weeks |
| 製造商零件編號: | SIA778DJ-T1-GE3 |
| 輸入電容（Ciss）（Max）@ Vds: | 500pF @ 6V |
| 柵極電荷（Qg）（Max）@ Vgs: | 15nC @ 8V |
| FET型: | 2 N-Channel (Dual) |
| FET特點: | Logic Level Gate |
| 展開說明: | Mosfet Array 2 N-Channel (Dual) 12V, 20V 4.5A, 1.5A 6.5W, 5W Surface Mount PowerPAK® SC-70-6 Dual |
| 漏極至源極電壓（Vdss）: | 12V, 20V |
| 描述: | MOSFET 2N-CH 12V/20V SC70-6 |
| 電流 - 25°C連續排水（Id）: | 4.5A, 1.5A |
| Email: | [email protected] |
SIA778DJ-T1-GE3的相似型號
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BSC150N03LD G | Infineon Technologies | MOSFET 2N-CH 30V 8A 8TDSON | 在線詢價 |
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SIA777EDJ-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V/12V SC70-6L | 在線詢價 |
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