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SI8806DB-T2-E1
- 型號:
- SI8806DB-T2-E1
- 描述:
- MOSFET N-CH 12V MICROFOOT
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 18319 Pieces
簡單介紹
BYCHIPS是 SI8806DB-T2-E1的现货代理商，我們有庫存立即運輸，也可供長時間供應。請寄給我們您的SI8806DB-T2-E1購買計劃通過電子郵件，我們會根據您的計劃給您最優惠的價格。
產品特性
| VGS（TH）（最大）@標識: | 1V @ 250µA |
|---|---|
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | 4-Microfoot |
| 系列: | TrenchFET® |
| RDS（ON）（最大值）@標識，柵極電壓: | 43 mOhm @ 1A, 4.5V |
| 功率耗散（最大）: | 500mW (Ta) |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | 4-XFBGA |
| 其他名稱: | SI8806DB-T2-E1TR |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 22 Weeks |
| 製造商零件編號: | SI8806DB-T2-E1 |
| 輸入電容（Ciss）（Max）@ Vds: | - |
| 柵極電荷（Qg）（Max）@ Vgs: | 17nC @ 8V |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 12V 500mW (Ta) Surface Mount 4-Microfoot |
| 漏極至源極電壓（Vdss）: | 12V |
| 描述: | MOSFET N-CH 12V MICROFOOT |
| 電流 - 25°C連續排水（Id）: | - |
| Email: | [email protected] |
SI8806DB-T2-E1的相似型號
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