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SI7860DP-T1-E3
- 型號:
- SI7860DP-T1-E3
- 描述:
- MOSFET N-CH 30V 11A PPAK SO-8
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 17900 Pieces
簡單介紹
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產品特性
| VGS（TH）（最大）@標識: | 3V @ 250µA |
|---|---|
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | PowerPAK® SO-8 |
| 系列: | TrenchFET® |
| RDS（ON）（最大值）@標識，柵極電壓: | 8 mOhm @ 18A, 10V |
| 功率耗散（最大）: | 1.8W (Ta) |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | PowerPAK® SO-8 |
| 其他名稱: | SI7860DP-T1-E3-ND SI7860DP-T1-E3TR SI7860DPT1E3 |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商零件編號: | SI7860DP-T1-E3 |
| 輸入電容（Ciss）（Max）@ Vds: | - |
| 柵極電荷（Qg）（Max）@ Vgs: | 18nC @ 4.5V |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 30V 11A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8 |
| 漏極至源極電壓（Vdss）: | 30V |
| 描述: | MOSFET N-CH 30V 11A PPAK SO-8 |
| 電流 - 25°C連續排水（Id）: | 11A (Ta) |
| Email: | [email protected] |
SI7860DP-T1-E3的相似型號
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