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SI3900DV-T1-GE3
- 型號:
- SI3900DV-T1-GE3
- 描述:
- MOSFET 2N-CH 20V 2A 6-TSOP
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 13921 Pieces
簡單介紹
BYCHIPS是 SI3900DV-T1-GE3的现货代理商，我們有庫存立即運輸，也可供長時間供應。請寄給我們您的SI3900DV-T1-GE3購買計劃通過電子郵件，我們會根據您的計劃給您最優惠的價格。
產品特性
| VGS（TH）（最大）@標識: | 1.5V @ 250µA |
|---|---|
| 供應商設備封裝: | 6-TSOP |
| 系列: | TrenchFET® |
| RDS（ON）（最大值）@標識，柵極電壓: | 125 mOhm @ 2.4A, 4.5V |
| 功率 - 最大: | 830mW |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | SOT-23-6 Thin, TSOT-23-6 |
| 其他名稱: | SI3900DV-T1-GE3TR SI3900DVT1GE3 |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 15 Weeks |
| 製造商零件編號: | SI3900DV-T1-GE3 |
| 輸入電容（Ciss）（Max）@ Vds: | - |
| 柵極電荷（Qg）（Max）@ Vgs: | 4nC @ 4.5V |
| FET型: | 2 N-Channel (Dual) |
| FET特點: | Logic Level Gate |
| 展開說明: | Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP |
| 漏極至源極電壓（Vdss）: | 20V |
| 描述: | MOSFET 2N-CH 20V 2A 6-TSOP |
| 電流 - 25°C連續排水（Id）: | 2A |
| Email: | [email protected] |
SI3900DV-T1-GE3的相似型號
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