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SI1539CDL-T1-GE3
- 型號:
- SI1539CDL-T1-GE3
- 描述:
- MOSFET N/P-CH 30V SOT363
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 18610 Pieces
簡單介紹
BYCHIPS是 SI1539CDL-T1-GE3的现货代理商，我們有庫存立即運輸，也可供長時間供應。請寄給我們您的SI1539CDL-T1-GE3購買計劃通過電子郵件，我們會根據您的計劃給您最優惠的價格。
產品特性
| VGS（TH）（最大）@標識: | 2.5V @ 250µA |
|---|---|
| 供應商設備封裝: | SOT-363 |
| 系列: | TrenchFET® |
| RDS（ON）（最大值）@標識，柵極電壓: | 388 mOhm @ 600mA, 10V |
| 功率 - 最大: | 340mW |
| 封装: | Original-Reel® |
| 封裝/箱體: | 6-TSSOP, SC-88, SOT-363 |
| 其他名稱: | SI1539CDL-T1-GE3DKR |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 24 Weeks |
| 製造商零件編號: | SI1539CDL-T1-GE3 |
| 輸入電容（Ciss）（Max）@ Vds: | 28pF @ 15V |
| 柵極電荷（Qg）（Max）@ Vgs: | 1.5nC @ 10V |
| FET型: | N and P-Channel |
| FET特點: | Logic Level Gate |
| 展開說明: | Mosfet Array N and P-Channel 30V 700mA, 500mA 340mW Surface Mount SOT-363 |
| 漏極至源極電壓（Vdss）: | 30V |
| 描述: | MOSFET N/P-CH 30V SOT363 |
| 電流 - 25°C連續排水（Id）: | 700mA, 500mA |
| Email: | [email protected] |
SI1539CDL-T1-GE3的相似型號
| 圖片 | 型號 | 製造商 | 描述 | 查看 |
|---|---|---|---|---|
 |
SI1926DL-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 60V 0.37A SOT363 | 在線詢價 |
|
SI1539DL-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 30V SC70-6 | 在線詢價 |
 |
AUIRF7304QTR | Infineon Technologies | MOSFET 2P-CH 20V 4A 8SOIC | 在線詢價 |
 |
NVMFD5489NLWFT1G | ON Semiconductor | MOSFET 2N-CH 60V 4.5A DFN8 | 在線詢價 |
|
SI1539DL-T1-E3 | Vishay Siliconix | MOSFET N/P-CH 30V SC70-6 | 在線詢價 |
|
SI1972DH-T1-E3 | Vishay Siliconix | MOSFET 2N-CH 30V 1.3A SC70-6 | 在線詢價 |
 |
DMN3008SFGQ-7 | Diodes Incorporated | MOSFET NCH 30V 17.6A POWERDI | 在線詢價 |
 |
DMP3098LSD-13 | Diodes Incorporated | MOSFET 2P-CH 30V 4.4A 8-SOIC | 在線詢價 |
 |
CMLDM7003TG TR | Central Semiconductor Corp | MOSFET 2N-CH 50V 0.28A SOT563 | 在線詢價 |
 |
SI7946DP-T1-E3 | Vishay Siliconix | MOSFET 2N-CH 150V 2.1A PPAK SO-8 | 在線詢價 |
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