購買 SI1305EDL-T1-GE3與BYCHPS
購買即有保證
SI1305EDL-T1-GE3
- 型號:
- SI1305EDL-T1-GE3
- 描述:
- MOSFET P-CH 8V 0.86A SOT323-3
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 12914 Pieces
簡單介紹
BYCHIPS是 SI1305EDL-T1-GE3的现货代理商，我們有庫存立即運輸，也可供長時間供應。請寄給我們您的SI1305EDL-T1-GE3購買計劃通過電子郵件，我們會根據您的計劃給您最優惠的價格。
產品特性
| VGS（TH）（最大）@標識: | 450mV @ 250µA (Min) |
|---|---|
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | SC-70-3 |
| 系列: | - |
| RDS（ON）（最大值）@標識，柵極電壓: | 280 mOhm @ 1A, 4.5V |
| 功率耗散（最大）: | 290mW (Ta) |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | SC-70, SOT-323 |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商零件編號: | SI1305EDL-T1-GE3 |
| 輸入電容（Ciss）（Max）@ Vds: | - |
| 柵極電荷（Qg）（Max）@ Vgs: | 4nC @ 4.5V |
| FET型: | P-Channel |
| FET特點: | - |
| 展開說明: | P-Channel 8V 860mA (Ta) 290mW (Ta) Surface Mount SC-70-3 |
| 漏極至源極電壓（Vdss）: | 8V |
| 描述: | MOSFET P-CH 8V 0.86A SOT323-3 |
| 電流 - 25°C連續排水（Id）: | 860mA (Ta) |
| Email: | [email protected] |
SI1305EDL-T1-GE3的相似型號
最新資訊
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog