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SG2013J-883B
- 型號:
- SG2013J-883B
- 製造商:
- Microsemi
- 描述:
- TRANS 7NPN DARL 50V 0.6A 16JDIP
- 無鉛狀態/ RoHS狀態:
- 包含鉛/ RoHS不兼容
- 庫存數量:
- 14721 Pieces
- 數據表:
- SG2013J-883B.pdf
簡單介紹
BYCHIPS是 SG2013J-883B的现货代理商，我們有庫存立即運輸，也可供長時間供應。請寄給我們您的SG2013J-883B購買計劃通過電子郵件，我們會根據您的計劃給您最優惠的價格。
產品特性
| 電壓 - 集電極發射極擊穿（最大）: | 50V |
|---|---|
| Vce飽和（最大）@ IB，IC: | 1.9V @ 600µA, 500mA |
| 晶體管類型: | 7 NPN Darlington |
| 供應商設備封裝: | 16-CDIP |
| 系列: | - |
| 功率 - 最大: | - |
| 封装: | Tube |
| 封裝/箱體: | - |
| 其他名稱: | 1259-1108 1259-1108-MIL |
| 工作溫度: | 150°C (TJ) |
| 安裝類型: | Through Hole |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商零件編號: | SG2013J-883B |
| 頻率 - 轉換: | - |
| 展開說明: | Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 600mA Through Hole 16-CDIP |
| 描述: | TRANS 7NPN DARL 50V 0.6A 16JDIP |
| 直流電流增益（HFE）（最小值）@ IC，的Vce: | 900 @ 500mA, 2V |
| 電流 - 集電極截止（最大）: | - |
| 電流 - 集電極（Ic）（最大）: | 600mA |
| Email: | [email protected] |
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