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RYC002N05T316
- 型號:
- RYC002N05T316
- 描述:
- 0.9V DRIVE NCH SILICON MOSFET
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 17988 Pieces
簡單介紹
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產品特性
| VGS（TH）（最大）@標識: | 800mV @ 1mA |
|---|---|
| Vgs（最大）: | ±8V |
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | SOT-23 |
| 系列: | - |
| RDS（ON）（最大值）@標識，柵極電壓: | 2.2 Ohm @ 200mA, 4.5V |
| 功率耗散（最大）: | 350mW (Tc) |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | TO-236-3, SC-59, SOT-23-3 |
| 其他名稱: | RYC002N05T316TR |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 10 Weeks |
| 製造商零件編號: | RYC002N05T316 |
| 輸入電容（Ciss）（Max）@ Vds: | 26pF @ 10V |
| 柵極電荷（Qg）（Max）@ Vgs: | - |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 50V 200mA (Tc) 350mW (Tc) Surface Mount SOT-23 |
| 驅動電壓（最大Rds開，最小Rds開）: | 4.5V |
| 漏極至源極電壓（Vdss）: | 50V |
| 描述: | 0.9V DRIVE NCH SILICON MOSFET |
| 電流 - 25°C連續排水（Id）: | 200mA (Tc) |
| Email: | [email protected] |
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