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RQ3E180BNTB
- 型號:
- RQ3E180BNTB
- 描述:
- MOSFET N-CH 30V 18A 8HSMT
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 19091 Pieces
- 數據表:
- RQ3E180BNTB.pdf
簡單介紹
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產品特性
| VGS（TH）（最大）@標識: | 2.5V @ 1mA |
|---|---|
| Vgs（最大）: | ±20V |
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | 8-HSMT (3.2x3) |
| 系列: | - |
| RDS（ON）（最大值）@標識，柵極電壓: | 3.9 mOhm @ 18A, 10V |
| 功率耗散（最大）: | 2W (Ta), 20W (Tc) |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | 8-PowerVDFN |
| 其他名稱: | RQ3E180BNTBTR |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 10 Weeks |
| 製造商零件編號: | RQ3E180BNTB |
| 輸入電容（Ciss）（Max）@ Vds: | 3500pF @ 15V |
| 柵極電荷（Qg）（Max）@ Vgs: | 72nC @ 10V |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 30V 18A (Ta), 39A (Tc) 2W (Ta), 20W (Tc) Surface Mount 8-HSMT (3.2x3) |
| 驅動電壓（最大Rds開，最小Rds開）: | 4.5V, 10V |
| 漏極至源極電壓（Vdss）: | 30V |
| 描述: | MOSFET N-CH 30V 18A 8HSMT |
| 電流 - 25°C連續排水（Id）: | 18A (Ta), 39A (Tc) |
| Email: | [email protected] |
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