購買 PSMN006-20K,518與BYCHPS
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| VGS(TH)(最大)@標識: | 700mV @ 1mA |
|---|---|
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | 8-SO |
| 系列: | TrenchMOS™ |
| RDS(ON)(最大值)@標識,柵極電壓: | 5 mOhm @ 5A, 4.5V |
| 功率耗散(最大): | 8.3W (Tc) |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | 8-SOIC (0.154", 3.90mm Width) |
| 其他名稱: | 934057032518 PSMN006-20K /T3 PSMN006-20K /T3-ND |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度(MSL): | 2 (1 Year) |
| 製造商標準交貨期: | 16 Weeks |
| 製造商零件編號: | PSMN006-20K,518 |
| 輸入電容(Ciss)(Max)@ Vds: | 4350pF @ 20V |
| 柵極電荷(Qg)(Max)@ Vgs: | 32nC @ 2.5V |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 20V 32A (Tc) 8.3W (Tc) Surface Mount 8-SO |
| 漏極至源極電壓(Vdss): | 20V |
| 描述: | MOSFET N-CH 20V 32A 8-SOIC |
| 電流 - 25°C連續排水(Id): | 32A (Tc) |
| Email: | [email protected] |