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PMDPB28UN,115
- 型號:
- PMDPB28UN,115
- 描述:
- MOSFET 2N-CH 20V 4.6A HUSON6
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 17329 Pieces
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產品特性
| VGS（TH）（最大）@標識: | 1V @ 250µA |
|---|---|
| 供應商設備封裝: | DFN2020-6 |
| 系列: | - |
| RDS（ON）（最大值）@標識，柵極電壓: | 37 mOhm @ 4.6A, 4.5V |
| 功率 - 最大: | 510mW |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | 6-UDFN Exposed Pad |
| 其他名稱: | 568-10755-2 934066488115 PMDPB28UN,115-ND |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商零件編號: | PMDPB28UN,115 |
| 輸入電容（Ciss）（Max）@ Vds: | 265pF @ 10V |
| 柵極電荷（Qg）（Max）@ Vgs: | 4.7nC @ 4.5V |
| FET型: | 2 N-Channel (Dual) |
| FET特點: | Logic Level Gate |
| 展開說明: | Mosfet Array 2 N-Channel (Dual) 20V 4.6A 510mW Surface Mount DFN2020-6 |
| 漏極至源極電壓（Vdss）: | 20V |
| 描述: | MOSFET 2N-CH 20V 4.6A HUSON6 |
| 電流 - 25°C連續排水（Id）: | 4.6A |
| Email: | [email protected] |
PMDPB28UN,115的相似型號
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|---|---|---|---|---|
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ALD1117PAL | Advanced Linear Devices Inc. | MOSFET 2P-CH 10.6V 8DIP | 在線詢價 |
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NTJD1155LT1G | ON Semiconductor | MOSFET N/P-CH 8V 1.3A SOT-363 | 在線詢價 |
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NTND31015NZTAG | ON Semiconductor | MOSFET 2N-CH 20V 0.2A XLLGA6 | 在線詢價 |
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SI1970DH-T1-E3 | Vishay Siliconix | MOSFET 2N-CH 30V 1.3A SC70-6 | 在線詢價 |
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DI9952T | Diodes Incorporated | MOSFET N/P-CH 30V 2.9A 8-SOIC | 在線詢價 |
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PMDPB56XN,115 | NXP USA Inc. | MOSFET 2N-CH 30V 3.1A HUSON6 | 在線詢價 |
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CSD87355Q5D | Texas Instruments | MOSFET 2N-CH 30V 8LSON | 在線詢價 |
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FDR8508P | Fairchild/ON Semiconductor | MOSFET 2P-CH 30V 3A SSOT-8 | 在線詢價 |
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NTMD2C02R2SG | ON Semiconductor | MOSFET N/P-CH 20V 8SOIC | 在線詢價 |
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PMDPB95XNE,115 | NXP USA Inc. | MOSFET 2N-CH 30V 2.4A HUSON6 | 在線詢價 |
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FMP36-015P | IXYS | MOSFET N/P-CH 150V 36A/22A I4PAC | 在線詢價 |
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DMC3021LSDQ-13 | Diodes Incorporated | MOSFET N/P-CH 30V 8.5A/7A 8-SO | 在線詢價 |
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PMDPB42UN,115 | NXP USA Inc. | MOSFET 2N-CH 20V 3.9A HUSON6 | 在線詢價 |
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SP8J5TB | Rohm Semiconductor | MOSFET 2P-CH 30V 7A 8-SOIC | 在線詢價 |
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SSM6N7002BFU,LF | Toshiba Semiconductor and Storage | MOSFET 2N-CH 60V 0.2A US6 | 在線詢價 |
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