購買 PHM25NQ10T,518與BYCHPS
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| VGS(TH)(最大)@標識: | 4V @ 1mA |
|---|---|
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | 8-HVSON (6x5) |
| 系列: | TrenchMOS™ |
| RDS(ON)(最大值)@標識,柵極電壓: | 30 mOhm @ 10A, 10V |
| 功率耗散(最大): | 62.5W (Tc) |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | 8-VDFN Exposed Pad |
| 其他名稱: | 934057309518 PHM25NQ10T /T3 PHM25NQ10T /T3-ND |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度(MSL): | 1 (Unlimited) |
| 製造商零件編號: | PHM25NQ10T,518 |
| 輸入電容(Ciss)(Max)@ Vds: | 1800pF @ 20V |
| 柵極電荷(Qg)(Max)@ Vgs: | 26.6nC @ 10V |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 100V 30.7A (Tc) 62.5W (Tc) Surface Mount 8-HVSON (6x5) |
| 漏極至源極電壓(Vdss): | 100V |
| 描述: | MOSFET N-CH 100V 30.7A 8HVSON |
| 電流 - 25°C連續排水(Id): | 30.7A (Tc) |
| Email: | [email protected] |