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PEMD19,115
- 型號:
- PEMD19,115
- 製造商:
- Nexperia
- 描述:
- TRANS PREBIAS NPN/PNP SOT666
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 18691 Pieces
- 數據表:
- PEMD19,115.pdf
簡單介紹
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產品特性
| 電壓 - 集電極發射極擊穿（最大）: | 50V |
|---|---|
| Vce飽和（最大）@ IB，IC: | 150mV @ 500µA, 10mA |
| 晶體管類型: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| 供應商設備封裝: | SOT-666 |
| 系列: | - |
| 電阻 - 發射極基（R 2）（歐姆）: | - |
| 電阻 - 基（R 1）（歐姆）: | 22k |
| 功率 - 最大: | 300mW |
| 封装: | Tape & Reel (TR) |
| 封裝/箱體: | SOT-563, SOT-666 |
| 其他名稱: | 934058924115 PEMD19 T/R PEMD19 T/R-ND |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商零件編號: | PEMD19,115 |
| 頻率 - 轉換: | - |
| 展開說明: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666 |
| 描述: | TRANS PREBIAS NPN/PNP SOT666 |
| 直流電流增益（HFE）（最小值）@ IC，的Vce: | 100 @ 1mA, 5V |
| 電流 - 集電極截止（最大）: | 1µA |
| 電流 - 集電極（Ic）（最大）: | 100mA |
| Email: | [email protected] |
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