購買 NTD4857N-1G與BYCHPS
購買即有保證
VGS(TH)(最大)@標識: | 2.5V @ 250µA |
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技術: | MOSFET (Metal Oxide) |
供應商設備封裝: | I-Pak |
系列: | - |
RDS(ON)(最大值)@標識,柵極電壓: | 5.7 mOhm @ 30A, 10V |
功率耗散(最大): | 1.31W (Ta), 56.6W (Tc) |
封装: | Tube |
封裝/箱體: | TO-251-3 Short Leads, IPak, TO-251AA |
工作溫度: | -55°C ~ 175°C (TJ) |
安裝類型: | Through Hole |
濕度敏感度(MSL): | 1 (Unlimited) |
製造商零件編號: | NTD4857N-1G |
輸入電容(Ciss)(Max)@ Vds: | 1960pF @ 12V |
柵極電荷(Qg)(Max)@ Vgs: | 24nC @ 4.5V |
FET型: | N-Channel |
FET特點: | - |
展開說明: | N-Channel 25V 12A (Ta), 78A (Tc) 1.31W (Ta), 56.6W (Tc) Through Hole I-Pak |
漏極至源極電壓(Vdss): | 25V |
描述: | MOSFET N-CH 25V 12A IPAK |
電流 - 25°C連續排水(Id): | 12A (Ta), 78A (Tc) |
Email: | [email protected] |