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JAN1N5552US
- 型號:
- JAN1N5552US
- 製造商:
- Microsemi
- 描述:
- DIODE GEN PURP 600V 3A B-MELF
- 無鉛狀態/ RoHS狀態:
- 包含鉛/ RoHS不兼容
- 庫存數量:
- 12836 Pieces
- 數據表:
- JAN1N5552US.pdf
簡單介紹
BYCHIPS是 JAN1N5552US的现货代理商，我們有庫存立即運輸，也可供長時間供應。請寄給我們您的JAN1N5552US購買計劃通過電子郵件，我們會根據您的計劃給您最優惠的價格。
產品特性
| 電壓 - 正向（Vf）（最大）: | 1.2V @ 9A |
|---|---|
| 電壓 - （Vr）（最大）: | 600V |
| 供應商設備封裝: | D-5B |
| 速度: | Fast Recovery = 200mA (Io) |
| 系列: | Military, MIL-PRF-19500/420 |
| 反向恢復時間（trr）: | 2µs |
| 封装: | Bulk |
| 封裝/箱體: | SQ-MELF, B |
| 其他名稱: | 1086-19414 1086-19414-MIL |
| 工作溫度 - 結: | -65°C ~ 175°C |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 8 Weeks |
| 製造商零件編號: | JAN1N5552US |
| 展開說明: | Diode Standard 600V 3A Surface Mount D-5B |
| 二極管類型: | Standard |
| 描述: | DIODE GEN PURP 600V 3A B-MELF |
| 電流 - Vr時反向漏電: | 1µA @ 600V |
| 電流 - 平均整流（Io）: | 3A |
| 電容@ Vr，F時: | - |
| Email: | [email protected] |
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