購買 IXTH11P50與BYCHPS
購買即有保證
| VGS(TH)(最大)@標識: | 5V @ 250µA |
|---|---|
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | TO-247 (IXTH) |
| 系列: | - |
| RDS(ON)(最大值)@標識,柵極電壓: | 750 mOhm @ 5.5A, 10V |
| 功率耗散(最大): | 300W (Tc) |
| 封装: | Tube |
| 封裝/箱體: | TO-247-3 |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Through Hole |
| 製造商標準交貨期: | 8 Weeks |
| 製造商零件編號: | IXTH11P50 |
| 輸入電容(Ciss)(Max)@ Vds: | 4700pF @ 25V |
| 柵極電荷(Qg)(Max)@ Vgs: | 130nC @ 10V |
| FET型: | P-Channel |
| FET特點: | - |
| 展開說明: | P-Channel 500V 11A (Tc) 300W (Tc) Through Hole TO-247 (IXTH) |
| 漏極至源極電壓(Vdss): | 500V |
| 描述: | MOSFET P-CH 500V 11A TO-247AD |
| 電流 - 25°C連續排水(Id): | 11A (Tc) |
| Email: | [email protected] |