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IXTA08N100D2
- 型號:
- IXTA08N100D2
- 製造商:
- IXYS Corporation
- 描述:
- MOSFET N-CH 1000V 800MA D2PAK
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 14327 Pieces
- 數據表:
- IXTA08N100D2.pdf
簡單介紹
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產品特性
| VGS（TH）（最大）@標識: | - |
|---|---|
| Vgs（最大）: | ±20V |
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | TO-263 (IXTA) |
| 系列: | - |
| RDS（ON）（最大值）@標識，柵極電壓: | 21 Ohm @ 400mA, 0V |
| 功率耗散（最大）: | 60W (Tc) |
| 封装: | Tube |
| 封裝/箱體: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 8 Weeks |
| 製造商零件編號: | IXTA08N100D2 |
| 輸入電容（Ciss）（Max）@ Vds: | 325pF @ 25V |
| 柵極電荷（Qg）（Max）@ Vgs: | 14.6nC @ 5V |
| FET型: | N-Channel |
| FET特點: | Depletion Mode |
| 展開說明: | N-Channel 1000V (1kV) 800mA (Tc) 60W (Tc) Surface Mount TO-263 (IXTA) |
| 驅動電壓（最大Rds開，最小Rds開）: | - |
| 漏極至源極電壓（Vdss）: | 1000V (1kV) |
| 描述: | MOSFET N-CH 1000V 800MA D2PAK |
| 電流 - 25°C連續排水（Id）: | 800mA (Tc) |
| Email: | [email protected] |
IXTA08N100D2的相似型號
| 圖片 | 型號 | 製造商 | 描述 | 查看 |
|---|---|---|---|---|
 |
IXTA08N50D2 | IXYS | MOSFET N-CH 500V 800MA D2PAK | 在線詢價 |
|
IXTA05N100 | IXYS | MOSFET N-CH 1000V 0.75A TO-263 | 在線詢價 |
|
IXTA08N100P | IXYS | MOSFET N-CH 1000V 0.8A TO-263 | 在線詢價 |
|
IXTA08N120P | IXYS | MOSFET N-CH 1200V 0.8A TO-263 | 在線詢價 |
 |
SSM3K7002BSU,LF | Toshiba Semiconductor and Storage | MOSFET N-CH 60V .2A USM | 在線詢價 |
|
IXTA02N250 | IXYS | MOSFET N-CH 2500V 0.2A TO263 | 在線詢價 |
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SI7460DP-T1-E3 | Vishay Siliconix | MOSFET N-CH 60V 11A PPAK SO-8 | 在線詢價 |
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VN2110K1-G | Microchip Technology | MOSFET N-CH 100V 0.2A SOT23-3 | 在線詢價 |
|
IXTA02N450HV | IXYS | MOSFET N-CH 4500V 0.2A TO263 | 在線詢價 |
 |
IRF1324STRLPBF | Infineon Technologies | MOSFET N-CH 24V 195A D2PAK | 在線詢價 |
 |
IXTA05N100HV | IXYS | MOSFET N-CH 1KV 750MA TO263 | 在線詢價 |
|
IXTA06N120P | IXYS | MOSFET N-CH 1200V 0.6A TO-263 | 在線詢價 |
|
IXTA02N250HV | IXYS | MOSFET N-CH 2500V 0.2A TO263 | 在線詢價 |
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