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IRFBE30LPBF
- 型號:
- IRFBE30LPBF
- 描述:
- MOSFET N-CH 800V 4.1A TO-262
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 14782 Pieces
- 數據表:
- IRFBE30LPBF.pdf
簡單介紹
BYCHIPS是 IRFBE30LPBF的现货代理商，我們有庫存立即運輸，也可供長時間供應。請寄給我們您的IRFBE30LPBF購買計劃通過電子郵件，我們會根據您的計劃給您最優惠的價格。
產品特性
| VGS（TH）（最大）@標識: | 4V @ 250µA |
|---|---|
| Vgs（最大）: | ±20V |
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | I2PAK |
| 系列: | - |
| RDS（ON）（最大值）@標識，柵極電壓: | 3 Ohm @ 2.5A, 10V |
| 功率耗散（最大）: | 125W (Tc) |
| 封装: | Tube |
| 封裝/箱體: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| 其他名稱: | *IRFBE30LPBF |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Through Hole |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商標準交貨期: | 11 Weeks |
| 製造商零件編號: | IRFBE30LPBF |
| 輸入電容（Ciss）（Max）@ Vds: | 1300pF @ 25V |
| 柵極電荷（Qg）（Max）@ Vgs: | 78nC @ 10V |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 800V 4.1A (Tc) 125W (Tc) Through Hole I2PAK |
| 驅動電壓（最大Rds開，最小Rds開）: | 10V |
| 漏極至源極電壓（Vdss）: | 800V |
| 描述: | MOSFET N-CH 800V 4.1A TO-262 |
| 電流 - 25°C連續排水（Id）: | 4.1A (Tc) |
| Email: | [email protected] |
IRFBE30LPBF的相似型號
| 圖片 | 型號 | 製造商 | 描述 | 查看 |
|---|---|---|---|---|
 |
IRFBE30STRR | Vishay Siliconix | MOSFET N-CH 800V 4.1A D2PAK | 在線詢價 |
|
IRFBE30SPBF | Vishay Siliconix | MOSFET N-CH 800V 4.1A D2PAK | 在線詢價 |
 |
IRFBE30PBF | Vishay Siliconix | MOSFET N-CH 800V 4.1A TO-220AB | 在線詢價 |
|
IRFBE30STRL | Vishay Siliconix | MOSFET N-CH 800V 4.1A D2PAK | 在線詢價 |
 |
IRFBE30L | Vishay Siliconix | MOSFET N-CH 800V 4.1A TO-262 | 在線詢價 |
|
IRFBE20S | Vishay Siliconix | MOSFET N-CH 800V 1.8A D2PAK | 在線詢價 |
|
IRFBE30STRLPBF | Vishay Siliconix | MOSFET N-CH 800V 4.1A D2PAK | 在線詢價 |
|
IRFBE30 | Vishay Siliconix | MOSFET N-CH 800V 4.1A TO-220AB | 在線詢價 |
|
IRFBE30S | Vishay Siliconix | MOSFET N-CH 800V 4.1A D2PAK | 在線詢價 |
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