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IRF640NSPBF
- 型號:
- IRF640NSPBF
- 描述:
- MOSFET N-CH 200V 18A D2PAK
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 19034 Pieces
- 數據表:
- IRF640NSPBF.pdf
簡單介紹
BYCHIPS是 IRF640NSPBF的现货代理商，我們有庫存立即運輸，也可供長時間供應。請寄給我們您的IRF640NSPBF購買計劃通過電子郵件，我們會根據您的計劃給您最優惠的價格。
產品特性
| VGS（TH）（最大）@標識: | 4V @ 250µA |
|---|---|
| Vgs（最大）: | ±20V |
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | D2PAK |
| 系列: | HEXFET® |
| RDS（ON）（最大值）@標識，柵極電壓: | 150 mOhm @ 11A, 10V |
| 功率耗散（最大）: | 150W (Tc) |
| 封装: | Tube |
| 封裝/箱體: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| 其他名稱: | *IRF640NSPBF 64-2142PBF 64-2142PBF-ND SP001554094 |
| 工作溫度: | -55°C ~ 175°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度（MSL）: | 1 (Unlimited) |
| 製造商零件編號: | IRF640NSPBF |
| 輸入電容（Ciss）（Max）@ Vds: | 1160pF @ 25V |
| 柵極電荷（Qg）（Max）@ Vgs: | 67nC @ 10V |
| FET型: | N-Channel |
| FET特點: | - |
| 展開說明: | N-Channel 200V 18A (Tc) 150W (Tc) Surface Mount D2PAK |
| 驅動電壓（最大Rds開，最小Rds開）: | 10V |
| 漏極至源極電壓（Vdss）: | 200V |
| 描述: | MOSFET N-CH 200V 18A D2PAK |
| 電流 - 25°C連續排水（Id）: | 18A (Tc) |
| Email: | [email protected] |
IRF640NSPBF的相似型號
| 圖片 | 型號 | 製造商 | 描述 | 查看 |
|---|---|---|---|---|
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IRF640NLPBF | Infineon Technologies | MOSFET N-CH 200V 18A TO-262 | 在線詢價 |
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IRF640NPBF | Infineon Technologies | MOSFET N-CH 200V 18A TO-220AB | 在線詢價 |
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IRF640NSTRRPBF | Infineon Technologies | MOSFET N-CH 200V 18A D2PAK | 在線詢價 |
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IRF640NSTRLPBF | Infineon Technologies | MOSFET N-CH 200V 18A D2PAK | 在線詢價 |
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IRF3415STRLPBF | Infineon Technologies | MOSFET N-CH 150V 43A D2PAK | 在線詢價 |
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STB120NF10T4 | STMicroelectronics | MOSFET N-CH 100V 110A D2PAK | 在線詢價 |
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IXTT1N300P3HV | IXYS | 2000V TO 3000V POLAR3 POWER MOSF | 在線詢價 |
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IXTA90N055T2 | IXYS | MOSFET N-CH 55V 90A TO-263 | 在線詢價 |
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IRF3707STRLPBF | Infineon Technologies | MOSFET N-CH 30V 62A D2PAK | 在線詢價 |
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